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| DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D). PINNING - TO-92 VARIANT 1 = drain 2 = source 3 = gate BF410A to D handbook, halfpage 2 1 3 g MAM257 d s Fig.1 Simplified outline and symbol QUICK REFERENCE DATA Drain-source voltage Drain current (DC or average) Total power dissipation up to Tamb = 75 C Drain current VDS = 10 V; VGS = 0 Transfer admittance VDS = 10 V; VGS = 0; f = 1 kHz Feedback capacitance VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 mA Noise figure at optimum source admittance GS = 1 mS; -BS = 3 mS; f = 100 MHz VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 mA F F typ. typ. 1.5 - 1.5 - - 1.5 - dB 1.5 dB Crs Crs typ. typ. 0.5 - 0.5 - - 0.5 - pF 0.5 pF yfs min. 2.5 4 6 7 mS IDSS min. max. 0.7 3.0 2.5 7.0 6 12 10 mA 18 mA Ptot max. BF410A B 300 C D mW VDS ID max. max. 20 30 V mA December 1990 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Drain current (DC or average) Gate current Total power dissipation up to Tamb = 75 C Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tamb = 25 C Gate cut-off current -VGS = 0.2 V; VDS = 0 Gate-drain breakdown voltage IS = 0; -ID = 10 A Drain current VDS = 10 V; VGS = 0 Gate-source cut-off voltage ID = 10 A; VDS = 10 V -V(P)GS typ. 0.8 IDSS min. max. 0.7 3.0 -V(BR)GDO min. 20 -IGSS max. BF410A 10 B Rth j-a VDS VDGO ID IG Ptot Tstg Tj BF410A to D max. max. max. max. max. max. 20 V 20 V 30 mA 10 mA 300 mW 150 C -65 to +150 C = 250 K/W C 10 20 6 12 2.2 D 10 20 nA V 10 20 2.5 7.0 1.5 10 mA 18 mA 3V December 1990 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Measuring conditions (common source): y-parameters (common source) Input capacitance at f = 1 MHz Input conductance at f = 100 MHz Feedback capacitance at f = 1 MHz Transfer admittance at f = 1 kHz VGS = 0 instead of ID = 5 mA Transfer admittance at f = 100 MHz Output capacitance at f = 1 MHz Output conductance at f = 1 MHz Output conductance at f = 100 MHz Noise figure at optimum source admittance GS = 1 mS; -BS = 3 mS; f = 100 MHz F typ. 1.5 1.5 1.5 Cis gis Crs yfs yfs yfs Cos gos gos max. typ. typ. max. min. min. typ. max. max. typ. BF410A to D VDS = 10 V; VGS = 0; Tamb = 25 C for BF410A and B VDS = 10 V; ID = 5 mA; Tamb = 25 C for BF410C and D BF410A 5 100 0.5 0.7 2.5 - 3.5 3 60 35 B 5 90 0.5 0.7 4.0 - 5.5 3 80 55 C 5 60 0.5 0.7 4.0 6.0 5.0 3 100 70 D 5 pF 50 S 0.5 pF 0.7 pF 3.5 mS 7.0 mS 5.0 mS 3 pF 120 S 90 S 1.5 dB handbook, halfpage 1.5 MDA277 handbook, halfpage Crs (pF) 1 10 |yfs| MDA278 BF410D BF410C (mA/V) 8 BF410B 6 BF410A 4 0.5 typ 2 0 0 4 8 12 16 20 VDS (V) 0 0 5 10 ID (mA) 15 Fig.2 VGS = 0 for BF410A and BF410B; ID = 5 mA for BF410C and BF410D; f = 1 MHz; Tamb = 25 C. Fig.3 VDS 10 V; f = 1 kHz; Tamb = 25 C; typical values. December 1990 4 Philips Semiconductors Product specification N-channel silicon field-effect transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle) BF410A to D SOT54 variant c L2 E d A L b 1 2 D e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-04-14 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max 2.5 L2 max 2.5 December 1990 5 Philips Semiconductors Product specification N-channel silicon field-effect transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values BF410A to D This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1990 6 |
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